CBE of 1.55 μm (GaIn)(AsP) lasers for monolithic integration

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1200-1204

  Nutsch, A ^a,b   Torabi, B ^a,b   Kratzer, H ^b   Trankle G ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CHEMICAL BEAM EPITAXY; HETEROJUNCTIONS; MASKS; MONOLITHIC INTEGRATED CIRCUITS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ARSENIC PHOSPHIDE; GALLIUM INDIUM;

QUANTUM WELL LASERS;

EID: 0031141091     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01205-5     Document Type: Article

References (4)

1. M. Silver and E.P, O'Reilly, IEEE J. Quantum Electron. 31 (1995) 1193.
2. P.J.A. Thijs, L.F. Tiermeijer, J.J.M. Binsma and T. van Dongen, IEEE J. Quantum Electron. 30 (1994) 477.
3. B. Torabi, A. Nutsch, H. Kratzer, G. Tränkle and G, Weimann, 8th Int. Conf. on Indium Phosphide and Related Materials, Schwäbisch Gmünd (1996) pp. 773-776.
4. H. Heinecke, B. Baur, R. Röger, B. Jobst and A. Miklis, J. Crystal Growth 124 (1992) 170.