MOMBE growth of InAsP laser materials

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 434-441

  Sugiura, Hideo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; EPITAXIAL GROWTH; HETEROJUNCTIONS; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRESS RELAXATION; THICKNESS MEASUREMENT;

INDIUM ARSENIC PHOSPHIDE; MAXIMUM OPERATING TEMPERATURE; STRAIN COMPENSATION; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0030195654     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00006-1     Document Type: Article

References (28)

1. P.J.A. Thijs, L.F. Tiemeijer, P.I. Kuindersma, J.J.M. Binsma and T. van Dongen, IEEE QE 27 (1991) 1426.
2. H. Oohashi, T. Hirono, S. Seki, H. Sugiura, J. Nakano, M. Yamamoto, Y. Tohmori and K. Yokoyama, J. Appl. Phys. 77 (1995) 4119.
3. R.P. Schneider, Jr. and B.W. Wessels, J. Electron, Mater. 20 (1991) 1117.
4. Y. Imajo, A. Kasukawa, T. Namegawa and T. Kikuta, Appl. Phys. Lett. 61 (1992) 2506.
5. M. Yamamoto, N. Yamamoto and J. Nakano, IEEE QE 30 (1994) 554.
6. C.P. Seltzer, S.D. Perrin, M.J. Harlow, R. Studd and P.C. Spurdens, Electron. Lett. 30 (1994) 227.
7. A. Ponchet, A. Rocher, A. Ougazzaden and A. Mircea, J. Appl. Phys. 75 (1994) 7881.
8. H.Q. Hou, A.N. Cheng, H.H. Wieder, W.S.C. Chang and C.W. Tu, Appl. Phys. Lett. 63 (1993) 1833.
9. T.H. Chiu, J.E. Cunningham, T.K. Woodward and T. Sizer II, Appl. Phys. Lett. 62 (1993) 340.
10. H. Sugiura, M. Mitsuhara, H. Oohashi, T. Hirono and K. Nakashima, J. Crystal Growth 147 (1995) 1.
11. S. Seki, T. Yamanaka, W. Lui and K. Yokoyama, J. Appl. Phys. 75 (1994) 1299.
12. H. Oohashi, T. Hirono, S. Seki, H. Sugiura, J. Nakano, M. Yamamoto, Y. Tohmori and K. Yokoyama, J. Appl. Phys. 77 (1995) 4119.
13. X.S. Jiang and P.K.L. Yu, Appl. Phys. Lett. 65 (1994) 2536.
14. K. Wakita, I. Kotaka, T. Amano and H. Sugiura, Electron. Lett. 31 (1995) 1339.
15. H. Sugiura, M. Mitsuhara, R. Iga and N. Yamamoto, J. Crystal Growth 141 (1994) 299.
16. H. Sugiura, M. Ogasawara, M. Mitsuhara, H. Oohashi and T. Amano, J. Appl. Phys., in press.
17. A. Ponchet and A. Rocher, J.Y. Emery, C. Starck and L. Goldstern, J. Appl. Phys. 74 (1993) 3778.
18. A.D. Smith, A.T.R. Briggs, K. Scarrott, X. Zhou and U. Bangert, Appl. Phys. 65 (1994) 2311.
19. D.C. Houghton, J. Appl. Phys. 70 (1991) 2136.
20. G.L. Price, Phys. Rev. Lett. 66 (1991) 469.
21. R. Iga, T. Yamada and H. Sugiura, Appl. Phys. Lett. 64 (1994) 983.
22. T. Okada, R.V. Kruzelecky, G.C. Weatherly, D.A. Thompson and B.J. Robinson, Appl. Phys. Lett. 63 (1993) 3194.
23. K. Naniwae, S. Sugou and T. Anan, Jpn. J. Appl. Phys. 33 (1994) L156.
24. M. Nakao, H. Oohashi, T. Hirono, H. Kamada and H. Sugiura, J. Appl. Phys. 78 (1995) 3462.
25. A. Freundlich, A.H. Bensaoula and A. Bensaoula, J. Crystal Growth 127 (1993) 246.
26. H. Oohashi, S. Seki, T. Hirono, H. Sugiura, T. Amano, M. Ueki, J. Nakano, M. Yamamoto, Y. Tohmori, M. Fukuda and K. Yokoyama, Electron. Lett. 31 (1995) 556.
27. Q.J. Xing, J.L. Brebner, R.A. Masut, G. Ahmad, G. Zhao, C.A. Tran and L. Isnard, Appl. Phys. Lett. 65 (1994) 567.
28. E. Tournie, P. Grunberg, C. Fouillant, S. Kadret, G. Boissier, A. Baranov, A. Joullie, E. Gaumont-Goarin and K.H. Ploog, Electron. Lett. 29 (1993) 1255.