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Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 161-166

Growth of 1.55 μm DH laserstructures using TBAs and TBP in MOMBE

(7) Keidler, M a Popp, M a Ritter, D a Marheineke, B a Heinecke, H a Baumeister, H b Veuhoff, E b

a UNIVERSITY OF ULM (Germany)

b SIEMENS AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HYDRIDES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

METALLORGANIC MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0030704063 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00627-6 Document Type: Article

Times cited : (5)

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