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Volumn 164, Issue 1-4, 1996, Pages 449-453
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MOMBE growth of high quality GaInAsP (λg = 1.05 μm) for waveguide applications
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
COMPOSITION;
DRY ETCHING;
EPITAXIAL GROWTH;
LIGHT TRANSMISSION;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
OPTICAL WAVEGUIDES;
PHOTOLUMINESCENCE;
TEMPERATURE;
X RAY DIFFRACTION;
BAND GAP EQUIVALENT EMISSION WAVELENGTH;
GALLIUM INDIUM ARSENIC PHOSPHIDE;
GROWTH TEMPERATURES;
OPTICAL PROPAGATION LOSSES;
RIB WAVEGUIDES;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0030193856
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)01059-9 Document Type: Article |
Times cited : (10)
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References (12)
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