Full gaseous source growth of separate confinement MQW 1.55 μn laser structures in a production MOMBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1247-1253

  Popp, M ^a   Heinecke, H ^a   Baumeister, H ^b   Veuhoff, E ^b  

^a UNIVERSITY OF ULM   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

DIETHYLZINC; LASER STRUCTURES; LATTICE MISMATCH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031142758     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00945-1     Document Type: Article

References (27)

1. W.T. Tsang, J. Crystal Growth 120 (1992) 1.
2. W.T. Tsang, J. Crystal Growth 105 (1990) 1.
3. W.T. Tsang, F.S. Choa, M.C. Wu, Y.K. Chen, A.M. Sergent and P.F. Sciortino, Jr., Appl. Phys. Lett. 58 (1991) 2610.
4. H. Heineckc, B. Baur, N. Emeis and M. Schier, J. Crystal Growth 120 (1992) 140.
5. H. Heinecke and E. Veuhoff, Mater. Sci. Eng. B 21 (1793) 120.
6. M. Wachter, U. Schöffel, M. Schier and H. Heinecke, J. Crystal Growth 175/176 (1997) 1186.
7. H. Ando, S. Yamaura and T. Fujii, J. Crystal Growth 164 (1995) 1.
8. B. Marheineke, M. Popp and H. Heinecke, J. Crystal Growth 164 (1996) 16.
9. T.H. Chiu, M.D. Williams, T.K. Woodward, J.E. Cunningham, J.E. Zucker, T. Sizer, F.G. Storz and J.F. Ferguson, J. Crystal Growth 124 (1992) 165.
10. H. Heinecke, B. Baur, R. Höger, B. Jobst and A. Miklis, J. Crystal Growth 124 (1992) 170.
11. J.L. Benchimol, G. Le Roux, H. Thibierge, C. Daguet, F. Alexandre and F. Brillouet, J. Crystal Growth 107 (1991) 978.
12. H.P. Meier, R.F. Broom, P.W. Epperlein, S. Hausser, A. Jakubowicz and W. Walter, J. Crystal Growth 127 (1993) 165.
13. K. Beer, B. Baur, H. Heinecke and R. Treichler, J. Crystal Growth 120 (1992) 312.
14. H. Heinecke, K. Werner, M. Weyers, H. Lüth and P. Balk, J. Crystal Growth 81 (1987) 270.
15. H. Ando, N. Okamoto, A. Sandhu and T. Fujii, Jpn. J. Appl. Phys. 30 (1991) L1696.
16. K. Kimura, S. Horiguchi, K. Kamon, M. Shimazu, M. Mashita, M. Mihara and M. Ishii, J. Crystal Growth 81 (1986) 276.
17. T. Sudersena Rao, C. Lacelle, S.J. Rolfe, M. Dion, J. Thompson, P. Marshall, P. Chow-Chong, D. Ross, M. Davies and A.P. Roth, Appl. Phys. Lett. 65 (8) (1994) 1015.
18. W.T. Tsang, F.S. Choa, R.A. Logan, T. Tanbum-Ek and A.M. Sergent, Appl. Phys. Lett. 59 (9) (1991) 1008.
19. E. Veuhoff, H. Baumeister, R. Treichler, M. Popp and H. Heinecke, J. Crystal Growth 164 (1996) 402.
20. M. Wachter and H. Heinecke, J. Crystal Growth 164 (1996) 302.
21. E. Kuphal, J. Crystal Growth 67 (1984) 441.
22. H. Asai and K. Oe, J. Appl. Phys. 54 (1983) 2052.
23. T. Martin, C.R. Whitehouse and P.A. Lane, J. Crystal Growth 107 (1991) 969.
24. A. Robertson, Jr., T.H. Chiu, W.T. Tsang and J.E. Cunningham, J. Appl. Phys. 65 (1988) 877.
25. H. Heinecke, J. Crystal Growth 127 (1993) 126.
26. C. Blaauw, F.R. Shepherd, C.J. Miner and A.J. Springthorpe, J. Electron. Mater. 19 (1990) 1.
27. B. Stegmüller, E. Veuhoff, J. Rieger and H. Hedrich, Electron. Lett. 29 (19) (1993) 1691.