Zn doping of InP/GaInAsP device structures in metalorganic molecular beam epitaxy using diethylzinc

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 402-408

  Veuhoff, E ^a   Baumeister, H ^a   Treichler, R ^a   Popp, M ^b   Heinecke, H ^b  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; EPITAXIAL GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TEMPERATURE; ZINC;

DIETHYLZINC; DOPANT REDISTRIBUTION; ELECTRICAL ACTIVATION; GALLIUM INDIUM ARSENIC PHOSPHIDE; GROWTH TEMPERATURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030195014     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00016-4     Document Type: Article

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