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Volumn 71, Issue 1, 1997, Pages 13-15

Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL BEAM EPITAXY; CURRENT DENSITY; ELECTRON ABSORPTION; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE;

EID: 0031558213     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119453     Document Type: Article
Times cited : (27)

References (15)
  • 11
    • 5544240837 scopus 로고
    • Ph.D. thesis, Ecole Polytechnique Fédérale de Lausanne
    • M. Gailhanou, Ph.D. thesis, Ecole Polytechnique Fédérale de Lausanne, 1995.
    • (1995)
    • Gailhanou, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.