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Volumn 71, Issue 1, 1997, Pages 13-15
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Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy
a
EPFL
(Switzerland)
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
CHEMICAL BEAM EPITAXY;
CURRENT DENSITY;
ELECTRON ABSORPTION;
EPITAXIAL GROWTH;
PHOTOLUMINESCENCE;
QUANTUM WELL LASERS;
RELAXATION PROCESSES;
SEMICONDUCTING INDIUM COMPOUNDS;
TEMPERATURE;
CAVITY LASERS;
INDIUM ARSENIUM PHOSPHIDE;
INDIUM GALLIUM ARSENIUM PHOSPHIDE;
STRAIN RELAXATION;
WAVELENGTH LASER EMISSION;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0031558213
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.119453 Document Type: Article |
Times cited : (27)
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References (15)
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