Recent progress in multi-wafer CBE systems

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 16-22

  Ando, Hideyasu ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

SEMICONDUCTOR WAFERS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030647393     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00654-9     Document Type: Article

References (10)

1. H. Ando, S. Yamaura, N, Okamoto, T. Tomioka and T. Fujii, presented at the 4th Int. Conf. on Chemical Beam Epitaxy and Related Epitaxial Growth Techniques, Nara, 1993, Late News X-L-5.
2. H. Ando, N. Okamoto, S. Yamaura, T. Tomioka, T. Takahashi, H. Shigematsu, A. Kawano, S. Sasa and T. Fujii, J. Crystal Growth 150 (1995) 1281.
3. H. Ando, S. Yamaura, N. Okamoto, T. Tomioka, T. Takahashi, S. Sasa and T. Fujii, in: Proc. 21st State-of-the-Art Program on Compound Semiconductors, Vol. 94-34, pp. 60-69.
4. H. Ando, S. Yamaura and T. Fujii, J. Crystal Growth 164 (1996) 1.
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6. C.R. Abernathy, Mater. Res. Soc. Symp. Proc. 300 (1993) 3.
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10. K. Iizuka, K. Matsumaru, T. Suzuki, H. Hirose, K. Suzuki and H. Okamoto, J. Crystal Growth 150 (1995) 13.