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Volumn 170, Issue 1-4, 1997, Pages 203-207
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Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
EPITAXIAL GROWTH;
HETEROJUNCTION BIPOLAR TRANSISTORS;
LIGHT REFLECTION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
MOVPE REACTORS;
REFLECTANCE ANISOTROPY SPECTROSCOPY;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030704061
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00622-7 Document Type: Article |
Times cited : (7)
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References (12)
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