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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 247-254

Element incorporation in GaInAsP for uniform large area MOMBE

(4) Popp, M a Baumeister, H b Veuhoff, E b Heinecke, H a

a UNIVERSITY OF ULM (Germany)

b SIEMENS AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; ELECTRON EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032099594 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00052-9 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.