High performance 0.1- μm room temperature Si MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 1992-June, Issue , 1992, Pages 86-87

  Yan, R H ^a   Lee, K F ^a   Jeon, D Y ^a   Kim, Y O ^a   Park, B G ^a   Pinto, M R ^a   Rafferly, C S ^a   Tennant, D M ^a   Westerwick, E H ^a   Chin, G M ^a   Morris, M D ^a   Mansfield, K ^a   Early, P ^a   Mulgrew, W M ^a   Watts, R K ^a   Voshchenkov, A M ^a   Bokor, J ^a   Swartz, R G ^a   Ourmazd, A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; SILICON; VLSI CIRCUITS;

DESIGN AND IMPLEMENTATIONS; GAIN CUTOFF FREQUENCY; GATE OXIDE; HIGH CURRENTS; KEY PROCESS; NMOSFETS; SHORT CHANNELS; SUBTHRESHOLD CHARACTERISTICS;

MOSFET DEVICES;

EID: 33747667461     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1992.200661     Document Type: Conference Paper

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