Experimental High Performance Sub-0.1 μm Channel nMOSFET's

IEEE Electron Device Letters

Volumn 15, Issue 1, 1994, Pages 28-30

  Mii, Y ^a   Rishton, S ^a   Taur, Y ^a   Kern, D ^a   Lii, T ^a   Lee, K ^a   Jenkins, K A ^a   Quinlan, D ^a   Brown, T ^a   Danner, D ^a   Sewell, F ^a   Polcari, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); MOS DEVICES; OSCILLATORS (ELECTRONIC); PERFORMANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

RETROGRADE CHANNEL DOPING; SHALLOW SOURCE DRAIN EXTENSION; SILICON DEVICES; SOURCE DRAIN HALO PROCESS; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 0028192803     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.289472     Document Type: Article

References (9)

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