Physics and technology of ultra short channel MOSFET devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 21-24

  Antoniadis, Dimitri A ^a   Chung, James E ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Charge carrier processes; Doping; Equations; Hydrodynamics; MOSFET circuits; Physics; Predictive models; Reliability theory; Temperature; Transconductance

Indexed keywords

DOPING (ADDITIVES); DRAIN CURRENT; ELECTRON DEVICES; HYDRODYNAMICS; PHYSICS; RELIABILITY THEORY; STATISTICAL MECHANICS; TEMPERATURE; TRANSCONDUCTANCE;

CHARGE CARRIER PROCESS; EQUATIONS; MOSFET CIRCUITS; PREDICTIVE MODELS; SHORT CHANNEL MOSFETS; STATIONARY TRANSPORT; SUPER STEEP RETROGRADE CHANNELS; VELOCITY SATURATION;

MOSFET DEVICES;

EID: 84954096367     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235433     Document Type: Conference Paper

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