Hot carrier degradation in 70 nm gate length MOSFETs with new double punchthrough stopper structure

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 1019-1022

  Koyanagi, M ^a   Kurino, H ^a   Hashimoto, H ^a   Sudo, Y ^a   Yokoyama, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS;

CHARGE PUMPING TECHNIQUE; CUT-OFF CURRENTS; DEVICE CHARACTERISTICS; HOT CARRIER DEGRADATION; HOT CARRIER STRESSING; SHORT CHANNEL MOSFETS; SHORT-CHANNEL EFFECT; SUPPLY VOLTAGES;

MOSFET DEVICES;

EID: 84938022925     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307534     Document Type: Conference Paper

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