High Performance 0.1 μm CMOS Devices with 1.5 V Power Supply

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 127-130

  Taur, Y ^a   Wind, S ^a   Mii, Y J ^a   Lii, Y ^a   Moy, D ^a   Jenkins, K A ^a   Chen, C L ^a   Coane, P J ^a   Klaus, D ^a   Bucchignano, J ^a   Rosenfield, M ^a   Thomson, M G R ^a   Polcari, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MOSFET DEVICES; POWER SUPPLY CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; ULSI CIRCUITS;

CMOS DEVICES; CURRENT GAINS; FABRICATION AND CHARACTERIZATIONS; GAIN FREQUENCIES; INVERTER DELAY; PERFORMANCE; POLYSILICON GATES; POWER SUPPLY; POWER SUPPLY VOLTAGE; THICK GATE OXIDES;

MOSFET DEVICES; CMOS INTEGRATED CIRCUITS;

DEVICE SCALING; POLYSILICON GATES; UNITY CURRENT GAIN FREQUENCIES;

EID: 0027879328     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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