Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2412-2419

  Witczak, S C ^a   Kosier, S L ^a   Schrimpf, R D ^a   Galloway, K F ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRONS; GAIN MEASUREMENT; HOT CARRIERS; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; STRESS ANALYSIS;

BIPOLAR JUNCTION TRANSISTORS; HOT CARRIER STRESS; RADIATION STRESS; SYNERGETIC EFFECTS;

BIPOLAR TRANSISTORS;

EID: 0028699526     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340596     Document Type: Article

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