Comparison of Hot-Carrier and Radiation Induced Increases in Base Current in Bipolar Transistors1

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2567-2573

  Pease, R L ^a   Kosier, S L ^b   Schrimpf, R D ^b   Combs, W E ^c   Davey, M ^c   DeLaus, M ^d   Fleetwood, D M ^e  

^a RLP Research   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

^d ANALOG DEVICES INC   (United States)

^e SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CORRELATION METHODS; ELECTRIC CURRENT MEASUREMENT; FAILURE ANALYSIS; GAIN MEASUREMENT; HOT CARRIERS; IONIZATION OF SOLIDS; LINEAR INTEGRATED CIRCUITS; MATHEMATICAL MODELS; RADIATION EFFECTS; STRESS ANALYSIS; VOLTAGE MEASUREMENT;

BASE CURRENT; CHARGE TRAPPING; INTERFACE TRAPS;

BIPOLAR TRANSISTORS;

EID: 0028712012     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340617     Document Type: Article

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