Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

IEEE Photonics Technology Letters

Volumn 8, Issue 10, 1996, Pages 1285-1287

  Hou, H Q ^a,c   Chui, H C ^b   Choquette, K D ^a,c   Hammons, B E ^a   Breiland, W G ^a   Geib, K M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; CARBON TETRACHLORIDE; CURVE FITTING; ELECTRIC CURRENTS; EPITAXIAL GROWTH; LEAST SQUARES APPROXIMATIONS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; REFLECTOMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ARSINE; DISILANE; REFLECTANCE; REFLECTOMETRY; TRIMETHYLALUMINUM; TRIMETHYLGALLIUM; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030269627     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.536629     Document Type: Article

References (11)

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11. 4 in metalorganic vapor phase epitaxy," to be published.