Selective oxidation of buried AlGaAs for fabrication of vertical-cavity lasers

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 53-61

  Choquette, Kent D ^a   Geib, K M ^a   Chui, H C ^a   Hou, H Q ^a   Hull, Robert ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ION IMPLANTATION; OPTICAL PROPERTIES; OXIDATION; OXIDES; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; TEMPERATURE;

ALUMINUM GALLIUM ARSENIDE; ARRHENIUS TEMPERATURE DEPENDENCE; ELECTRICAL CONFINEMENT; OPTICAL CONFINEMENT; SELECTIVE OXIDATION; ULTRALOW THRESHOLD CURRENTS; VERTICAL CAVITY LASERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030370353     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)