Oxidation of AlGaAs layers for tapered apertures in vertical-cavity lasers

Electronics Letters

Volumn 33, Issue 4, 1997, Pages 300-301

  Naone, R L ^a   Hegblom, E R ^a   Thibeault, B J ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

Aluminium; Oxidation; Vertical cavity surface emitting

Indexed keywords

DIELECTRIC MATERIALS; EPITAXIAL GROWTH; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

TAPERED DIELECTRIC APERTURES; VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031076450     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970222     Document Type: Article

References (9)

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