Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide

IEEE Photonics Technology Letters

Volumn 8, Issue 2, 1996, Pages 176-178

  Cheng, Yong ^b   Dapkus, P Daniel ^a,b   MacDougal, Michael H ^a,b   Yang, Gye Mo ^a  

^a IEEE

^b University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC CURRENTS; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; LOW TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

ALUMINUM ARSENIDE; CONTINOUS WAVE THRESHOLD CURRENTS; INDIUM GALLIUM ARSENIDE; LOW TEMPERATURE ANISOTROPIC WET OXIDATION; NARROW STRIPE LASERS;

QUANTUM WELL LASERS;

EID: 0030085682     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484232     Document Type: Article

References (11)

1. H. Zhao, M. H. MacDougal, P. D. Dapkus, K. Uppal, Y. Cheng, and G. M. Yang, "Submilliampere threshold current InGaAs/GaAs/AlGaAs lasers and laser arrays grown on nonplanar substrates," J. Select. Topics Quantum Electron., vol. 1, no. 2, pp. 196-202, June 1995.
2. Y. K. Sin, H. Horikawa, Y. Matsui, and T. Kamijoh, "Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects," Electron. Lett., vol. 29, pp. 873-874, 1993.
3. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers. New York: Academic, 1978, pt. B, pp. 217-224.
4. 1-x As quantum well heterostructure laser," Appl. Phys. Lett., vol. 63, pp. 1660-1662, 1993.
5. S. J. Caracci, F. A. Kish, N. Holonyak, Jr., S. A. Maranowski, S. C. Smith, and R. D. Burnham, "High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasers," Appl. Phys. Lett., vol. 61, pp. 321-323, 1992.
6. M. H. MacDougal, P. D. Dapkus, V. Pudikov, H. Zhao, and G. M. Yang, "Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors," IEEE, Photon. Technol. Lett., vol. 7, p. 229, 1995.
7. D. L. Huffaker, D. G. Deppe, and K. Kumar, "Native-oxide defined ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., vol. 65, pp. 97-99, 1994.
8. G. M. Yang, M. H. MacDougal, and P. D. Dapkus, "Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation," Electron. Lett., vol. 31, no. 11, pp. 886-888, 1995.
9. K. D. Choquette, R. P. Schneider, Jr., K. L. Lear, and K. M. Geib, "Low threshold voltage vertical-cavity lasers fabricated by selective oxidation," Electron. Lett., vol. 30, pp. 2043-2044, 1994.
10. 1-x As," Appl. Phys. Lett., vol. 60, pp. 3165-3167, 1994.
11. K. D. Coquette, R. P. Schneider, Jr., K. L. Lear, M. Hagerott Crawford, K. M. Geib, J. J. Figiel, and R. Hull, "Robust and wavelength insensitive performance of selectively oxidized vertical cavity lasers," in Talk TuD7-1 at OSA Conf. Semiconductor Lasers: Advance Devices and Applications, Keystone, CO, Aug. 1995.