Analysis of the temperature dependence of current gain in heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 17-24

  Ng, Chee Mun Sidney ^a   Houston, Peter A ^a   Yow, Ho Kwang ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; ELECTRON TUNNELING; FERMI LEVEL; GAIN MEASUREMENT; HIGH TEMPERATURE EFFECTS; NEGATIVE RESISTANCE; SEMICONDUCTOR DOPING; THERMIONIC CATHODES;

BASE CURRENT COMPONENTS; BOLTZMANN CONSTANT; CURRENT GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030846946     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554786     Document Type: Article

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