Temperature dependence of current gains in high C-doped base HBTs

Electronics Letters

Volumn 30, Issue 10, 1994, Pages 825-826

  Kren, D E ^a   Rezazadeh, A A ^a   Tothill, N ^b  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b Epitaxial Products International Ltd   (United Kingdom)

Author keywords

Electron hole recombination; Heterojunction bipolar transistors

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CURRENT GAINS; ELECTRON HOLE RECOMBINATION; HETEROJUNCTION BIPOLAR TRANSISTORS; TEMPERATURE DEPENDENCE;

BIPOLAR TRANSISTORS;

EID: 0028424864     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940559     Document Type: Article

References (6)

1. Alexandre, F., Benchimol, J. L., Dangla, J., Dubon-Chevallier, C., and Amarger, V.: ‘Heavily doped base GalnP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy’, Electron. Lett., 1990, 26, (21), pp. 1753-1755
2. Kren, D. E., Rezazadeh, A. A., Rees, P. K., and Tothill, J. N.: ‘High C-doped base InGaP/GaAs HBTs with improved characteristics’. 17th European Workshop on Compound Semiconductors and Integrated Circuits, Parma, Italy, May 31-June 2, 1993
3. Kren, D. E., Rezazadeh, A. A., Rees, P. K., and Tothill, J. N.: ‘High C-doped base InGaP/GaAs HBTs with improved characteristics grown by MOCVD’, Electron. Lett., 1993, 29, (11), pp. 961-963
4. Liu, W., Fan, S., Henderson, T., and Davito, D.: ‘Temperature dependence of current gains in GalnP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors’, IEEE Trans., 1993, ED-40, (7), pp. 1351-1353
5. Beyzavi, K., Lee, K., Kim, D. M., Nathan, M. I., Wrenner, K., and Wright, S. L.: ‘Temperature-dependence of minority-carrier mobility and recombination time in P-type GaAs’, Appl. Phys. Lett., 1991, 58, (12), pp. 1268-1270
6. Rezazadeh, A., Morgan, D., Mawby, P., and Kerr, T.: ‘Current transport mechanismm at the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE’, IEEE Trans., 1987, ED-34, (4) pp. 947-949