Electron Quasi-Fermi Level Splitting at the Base-Emitter Junction of AlGaAs/GaAs HBT’s

IEEE Transactions on Electron Devices

Volumn 40, Issue 6, 1993, Pages 1183-1185

  Pulfrey, David L ^a   Searles, Shawn ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; GAIN MEASUREMENT; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BASE-EMITTER JUNCTION; CURRENT GAIN; ELECTRON QUASI-FERMI LEVEL SPLITTING; SINGLE/DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0027607898     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.214752     Document Type: Article

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