An Analysis of Space-Charge-Region Recombination in HBT’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 4, 1994, Pages 476-483

  Searles, Shawn ^a   Pulfrey, David L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; GAIN MEASUREMENT; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

ABRUPT EMITTER BASE HETEROJUNCTION; SHOCKLEY READ HALL RECOMBINATION; SPACE CHARGE REGION RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 0028413987     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.278498     Document Type: Article

References (15)

1. S. S. Perlman and D. L. Feucht, “p-n Heterojunctions,” Solid-State Electron., vol. 7, pp. 911-923, 1964.
2. A. A. Grinberg, M. S. Shur, R. J. Fischer and H. Morkoc, “An investigation of the effect of graded-layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 31, pp. 1758-1765, 1984.
3. S-C. Lee and H-H. Lin, “Transport theory of the double heterojunction bipolar transistor based on current balancing concept,” J. Appl. Phys., vol. 59, pp. 1688-1695, 1986.
4. M. S. Lundstrom, “An Ebers-Moll Model for the Heterostructure Bipolar Transistor,” Solid-State Electron., vol. 29, pp. 1173-1179, 1986.
5. S. C. M. Ho and D. L. Pulfrey, “The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, pp. 2173-2182, 1989.
6. K. Horio and H. Yanai, “Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface,” IEEE Trans. Electron Dev., vol. 37, pp. 1093-1098, 1990.
7. C. D. Parikh and F. A. Lindholm, “Space-charge region recombination in heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 2197-2205, 1992.
8. C. T. Sah, R. N. Noyce, and W. Shockley, “Carrier generation and recombination in p-n junctions and p-n junction characteristics,” Proc. IRE, vol. 45, pp. 1228-1243, 1957.
9. S. C. Choo, “Carrier generation-recombination in the space charge region of an asymmetrical p-n junction,” Solid-State Electron., vol. 11, pp. 1069-1077, 1968.
10. I. S. Gradshteyn and I. M. Ryzhik, Tables of Integrals, Series, and Products. New York: Academic, 1992.
11. M. Takeshima, “Effect of Auger recombination on laser operation in Ga1-xAlxAs,” J. Appl. Phys., vol. 58, pp. 3846-3850, 1985.
12. R. H. Hall, “Recombination processes in semiconductors,” Proc. IEEE, vol. B-106, Suppl. 15-18, pp. 923-931, 1959.
13. D. L. Pulfrey and S. Searles, “Electron quasi-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT’s,” IEEE Trans. Electron Devices, vol. 40, p. 1183-1185, June 1993.
14. J. Feng, M.A.Sc. thesis, Univ. British Columbia, to be published.
15. A. P. Heberle, U. Strauss, W. W. Ruhle, K. H. Bachem, T. Lauterbach, and N. Haegle, “Minority-carrier lifetime in heavily doped GaAs:C,” Extended Abstracts, Int. Conf. on Solid-State Devices and Materials, Tsukuba, Japan, pp. 290-292, 1992.