Extrinsic base surface recombination current in surface-passivated ingap/gaas heterojunction bipolar transistors hiroshi ito

Japanese Journal of Applied Physics

Volumn 32, Issue 10 B, 1993, Pages L1500-L1502

  Nakajima, Osaake ^a   Nagata, Koichi ^a   Makimura, Takashi ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Extrinsic base surface passivation; GaAs; HBTs; InGaP; Surface recombination current

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INTERMETALLICS; SOLID STATE PHYSICS; SURFACE PHENOMENA;

EXTRINSIC BASE SURFACE PASSIVATION; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE; SURFACE RECOMBINATION CURRENT;

HETEROJUNCTIONS;

EID: 0027678680     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L1500     Document Type: Article

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