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Applied Physics Letters

Volumn 56, Issue 6, 1990, Pages 563-565

Material properties of p-type GaAs at large dopings

(2) Tiwari, Sandip a Wright, Steven L b

a UNIVERSITY OF MICHIGAN (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000798049 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.102745 Document Type: Article

Times cited : (104)

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