Currents and Current Gain Analysis of Passivated Heterojunction Bipolar Transistors (HBT)

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2233-2240

  Zebda, Yousef ^a   Qasaimeh, Omar ^a  

^a JORDAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Jordan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; ELECTRIC SPACE CHARGE; GAIN CONTROL; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTOR DEVICE MODELS;

CURRENT GAIN ANALYSIS; SPACE CHARGE RECOMBINATION CURRENT; THERMIONIC FLUX;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0028750101     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337433     Document Type: Article

References (11)

1. Hin-Fai Chau, D. Pavlidis, J. Hu, and K. Tomizawa, “Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors,” IEEE Trans. Electron Devices, vol. 40, p. 2, Jan. 1993.
2. H. Kroemer, “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, p. 13, Jan. 1982.
3. J. Hu, D. Pavlidis, and K. Tomizawa, “Monte Carlo studies of the effect of emitter junction grading on the electron transport in InAlAs/InGaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, p. 1273, June 1993.
4. W. Liu and J. S. Harris, Jr., “Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, p. 2726, Dec. 1992.
5. C. D. Parikh and F. A. Lindholm, “Space-charge region recombination in heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, p. 2197, Oct. 1992.
6. C. D. Parikh and F. A. Lindholm, “A new charge-control for single and double heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, p. 1303, June 1992.
7. A. A. Grinberg and S. Luryi, “On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistors,” IEEE Trans. Electron Devices, vol. 40, p. 859, May 1993.
8. Tae-Woo Lee and Peter A. Houston, “Generalized analytical transport modeling of the dc characteristics of heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 40, p. 1390, Aug. 1993.
9. W. Shockley and W. T. Read, “Statistics of the recombination of electrons and holes,” Phys. Rev., vol. 87, p. 835, 1952.
10. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, p. 124.
11. W. Liu, D. Costa, and J. S. Harris, Jr., “Current gain of graded AlGaAs/GaAs heterojunction bipolar transistors with and without a base quasi-electric field,” IEEE Trans. Electron Devices, vol. 39, p. 2422, Nov. 1992.