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Volumn 40, Issue 5, 1993, Pages 859-866

On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; SEMICONDUCTOR DOPING;

EID: 0027589730     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210191     Document Type: Article
Times cited : (47)

References (16)
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    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1758-1765
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    • Lundstrom, M.S.1
  • 8
    • 0025456865 scopus 로고
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    • (1990) Solid-State Electron. , vol.33 , pp. 869-880
    • Ryum, B.R.1    Abdel-Motaleb, I.M.2
  • 9
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    • Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
    • A. F. J. Levi, B. Jalali, R. N. Nottenburg, and A. Y. Cho, “Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport,” Appl. Phys. Lett., vol. 60, pp. 460–462, 1992.
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  • 10
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    • Parikh, C.D.1    Lindholm, F.A.2
  • 11
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  • 12
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    • to be published
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  • 13
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  • 14
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  • 15
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.