-
1
-
-
0001242402
-
An investigation of the effect of graded layers and tunnelling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
-
A. A. Grinberg, M. S. Shur, R. J. Fischer, and H. Morkoc, “An investigation of the effect of graded layers and tunnelling on the performance of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1758–1765, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1758-1765
-
-
Grinberg, A.A.1
Shur, M.S.2
Fischer, R.J.3
Morkoc, H.4
-
2
-
-
0022659211
-
Analysis of d.c. characteristics of GaAlAs-GaAs double heterojunction bipolar transistors
-
D. Ankri, R. Azoulay, E. Caquot, J. Dangla, C. Dubon, and J. F. Palmier, “Analysis of d.c. characteristics of GaAlAs-GaAs double heterojunction bipolar transistors,” Solid-State Electron., vol. 29, pp. 141–149, 1986.
-
(1986)
Solid-State Electron
, vol.29
, pp. 141-149
-
-
Ankri, D.1
Azoulay, R.2
Caquot, E.3
Dangla, J.4
Dubon, C.5
Palmier, J.F.6
-
3
-
-
0001171833
-
Transport theory of the double heterojunction bipolar transistor based on current balancing concept
-
S. C. Lee and H. H. Lin, “Transport theory of the double heterojunction bipolar transistor based on current balancing concept,” J. Appl. Phys., vol. 59, pp. 1688–1695, 1986.
-
(1986)
J. Appl. Phys
, vol.59
, pp. 1688-1695
-
-
Lee, S.C.1
Lin, H.H.2
-
4
-
-
0024749881
-
Investigation of injection mechanisms for InGaAs/InP double heterostructure bipolar transistors
-
A. Elshabini-Riad and J. He, “Investigation of injection mechanisms for InGaAs/InP double heterostructure bipolar transistors,” Solid-State Electron., vol. 32, pp. 853–860, 1989.
-
(1989)
Solid-State Electron
, vol.32
, pp. 853-860
-
-
Elshabini-Riad, A.1
He, J.2
-
5
-
-
0025456865
-
A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)
-
B. R. Ryum and I. M. Abdel-Motaleb, “A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs),” Solid-State Electron., vol. 33, pp. 869–880, 1990.
-
(1990)
Solid-State Electron
, vol.33
, pp. 869-880
-
-
Ryum, B.R.1
Abdel-Motaleb, I.M.2
-
6
-
-
0024613225
-
Investigation of high-current effects on the current gain of AlGaAs/GaAs/GaAs abrupt heterojunction bipolar transistors
-
J. J. Lion, “Investigation of high-current effects on the current gain of AlGaAs/GaAs/GaAs abrupt heterojunction bipolar transistors,” Solid-State Electron., vol. 32, pp. 169–174, 1989.
-
(1989)
Solid-State Electron
, vol.32
, pp. 169-174
-
-
Lion, J.J.1
-
7
-
-
0026123545
-
Collector-emitter offset voltage in heterojunction bipolar transistors
-
B. Mazhari, G. B. Gao, and M. Morkoc “Collector-emitter offset voltage in heterojunction bipolar transistors,” Solid-State Electron., vol. 34, pp. 315–321, 1991.
-
(1991)
Solid-State Electron
, vol.34
, pp. 315-321
-
-
Mazhari, B.1
Gao, G.B.2
Morkoc, M.3
-
8
-
-
0026237568
-
Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor
-
W. U. Liu, D. Costa, and J. S. Harris, “Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor,” Solid-State Electron., vol. 34, pp. 1119–1123, 1991.
-
(1991)
Solid-State Electron
, vol.34
, pp. 1119-1123
-
-
Liu, W.U.1
Costa, D.2
Harris, J.S.3
-
9
-
-
36549096960
-
Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors
-
N. Chand, R. Fischer, and H. Morkoc “Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors,” Appl. Phys. Lett., vol. 47, pp. 313–315, 1985.
-
(1985)
Appl. Phys. Lett
, vol.47
, pp. 313-315
-
-
Chand, N.1
Fischer, R.2
Morkoc, H.3
-
10
-
-
0026838289
-
Asymmetric characteristics of InGaP/GaAs double-heterojunction bipolar transistors grown by solid source molecular beam epitaxy
-
T. W. Lee, P. A. Houston, R. Kumar, G. Hill, and M. Hopkinson, “Asymmetric characteristics of InGaP/GaAs double-heterojunction bipolar transistors grown by solid source molecular beam epitaxy,” Semicond. Sci. Technol., vol. 7, pp. 425–428, 1992.
-
(1992)
Semicond. Sci. Technol
, vol.7
, pp. 425-428
-
-
Lee, T.W.1
Houston, P.A.2
Kumar, R.3
Hill, G.4
Hopkinson, M.5
-
11
-
-
0001380364
-
Conduction-band discontinuity in InGaP/GaAs measured using both currentvoltage and photoemission methods
-
T. W. Lee, P. A. Houston, R. Kumar, X. F. Yang, G. Hill, M. Hopkinson, and P. A. Claxton, “Conduction-band discontinuity in InGaP/GaAs measured using both currentvoltage and photoemission methods,” Appl. Phys. Lett., vol. 60, pp. 474–776, 1992.
-
(1992)
Appl. Phys. Lett
, vol.60
, pp. 474-776
-
-
Lee, T.W.1
Houston, P.A.2
Kumar, R.3
Yang, X.F.4
Hill, G.5
Hopkinson, M.6
Claxton, P.A.7
-
12
-
-
0024682740
-
Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy
-
T. Won, S. Iyer, S. Agarwala, and H. Morkoc “Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy,” IEEE Electron Device Lett., vol. 10, pp. 274–276, 1989.
-
(1989)
IEEE Electron Device Lett.
, vol.10
, pp. 274-276
-
-
Won, T.1
Iyer, S.2
Agarwala, S.3
Morkoc, H.4
|