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Volumn 40, Issue 8, 1993, Pages 1390-1397

Generalized Analytical Transport Modeling of the DC Characteristics of Heterojunction Bipolar Transistors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS;

EID: 0027648592     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.223697     Document Type: Article
Times cited : (27)

References (12)
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  • 2
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  • 3
    • 0001171833 scopus 로고
    • Transport theory of the double heterojunction bipolar transistor based on current balancing concept
    • S. C. Lee and H. H. Lin, “Transport theory of the double heterojunction bipolar transistor based on current balancing concept,” J. Appl. Phys., vol. 59, pp. 1688–1695, 1986.
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    • Lee, S.C.1    Lin, H.H.2
  • 4
    • 0024749881 scopus 로고
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    • A. Elshabini-Riad and J. He, “Investigation of injection mechanisms for InGaAs/InP double heterostructure bipolar transistors,” Solid-State Electron., vol. 32, pp. 853–860, 1989.
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    • Elshabini-Riad, A.1    He, J.2
  • 5
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    • A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)
    • B. R. Ryum and I. M. Abdel-Motaleb, “A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs),” Solid-State Electron., vol. 33, pp. 869–880, 1990.
    • (1990) Solid-State Electron , vol.33 , pp. 869-880
    • Ryum, B.R.1    Abdel-Motaleb, I.M.2
  • 6
    • 0024613225 scopus 로고
    • Investigation of high-current effects on the current gain of AlGaAs/GaAs/GaAs abrupt heterojunction bipolar transistors
    • J. J. Lion, “Investigation of high-current effects on the current gain of AlGaAs/GaAs/GaAs abrupt heterojunction bipolar transistors,” Solid-State Electron., vol. 32, pp. 169–174, 1989.
    • (1989) Solid-State Electron , vol.32 , pp. 169-174
    • Lion, J.J.1
  • 7
    • 0026123545 scopus 로고
    • Collector-emitter offset voltage in heterojunction bipolar transistors
    • B. Mazhari, G. B. Gao, and M. Morkoc “Collector-emitter offset voltage in heterojunction bipolar transistors,” Solid-State Electron., vol. 34, pp. 315–321, 1991.
    • (1991) Solid-State Electron , vol.34 , pp. 315-321
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  • 8
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    • (1991) Solid-State Electron , vol.34 , pp. 1119-1123
    • Liu, W.U.1    Costa, D.2    Harris, J.S.3
  • 9
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  • 10
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    • T. W. Lee, P. A. Houston, R. Kumar, G. Hill, and M. Hopkinson, “Asymmetric characteristics of InGaP/GaAs double-heterojunction bipolar transistors grown by solid source molecular beam epitaxy,” Semicond. Sci. Technol., vol. 7, pp. 425–428, 1992.
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  • 11
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.