Observation of the surface recombination current with an ideality factor of unity in algaas/gaas heterojunction bipolar transistors

Japanese Journal of Applied Physics

Volumn 30, Issue 2B, 1991, Pages L266-L268

  Mochizuki, Kazuhiro ^a   Masuda, Hiroshi ^a   Kawata, Masahiko ^a   Mitani, Katsuhiko ^a   Kusano, Chuushiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

Aluminum gallium arsenide; Base current; Gallium arsenide; Heterojunction bipolar transistor; Ideality factor; Surface recombination

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS; SURFACE RECOMBINATION CURRENT;

TRANSISTORS, BIPOLAR;

EID: 0026105672     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L266     Document Type: Article

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