High-temperature DC characteristics of Al-4Gao.52-4Ino.4sP/GaAs heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 2-7

  Yow, Ho Kwang ^a   Houston, Peter A ^a   Ng, Chee Mun Sidney ^a   Button, Christopher ^a   Roberts, John Stuart ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ETCHING; HIGH TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

BULK BASE RECOMBINATION; NEGATIVE DIFFERENTIAL RESISTANCE; STANDARD DOUBLE MESA PROCESS; VALENCE BAND DISCONTINUITY; WET CHEMICAL ETCHING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029732258     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477586     Document Type: Article

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