An Ebers-Moll model for the heterostructure bipolar transistor

Solid State Electronics

Volumn 29, Issue 11, 1986, Pages 1173-1179

  Lundstrom, M S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

BAND SPIKES; DOPING DENSITIES; EBERS-MOLL MODEL; HBT; HETEROSTRUCTURE BIPOLAR TRANSISTOR;

TRANSISTORS, BIPOLAR;

EID: 0022810417     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(86)90061-4     Document Type: Article

References (19)

1. Heterostructure bipolar transistors and integrated circuits
2. Microwave performance of GaAs/(Ga,Al)As heterojunction bipolar transistors
3. Ring oscillator circuit simulation with physical model for GaAs/GaAlAs heterojunction bipolar transistors
4. Accurate modeling of AlGaAs/GaAs heterostructure bipolar transistors by two-dimensional computer simulation
5. Modular Series on Solid-State Devices