Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation

Solid State Electronics

Volumn 35, Issue 4, 1992, Pages 579-585

  Liou, L L ^a   Huang, C I ^a   Ebel, J ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES - CALCULATIONS; TRANSISTORS, BIPOLAR - ELECTRIC PROPERTIES; TRANSISTORS, BIPOLAR - THERMAL EFFECTS;

HEAT TRANSFER EQUATION; MODULATION NATURE; POISSON'S EQUATION; SCHARFETTER-GUMMEL EXPRESSIONS;

TRANSISTORS, BIPOLAR;

EID: 0026852685     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90123-T     Document Type: Article

References (19)

1. Large-signal analysis of a silicon Read diode oscillator
2. Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistors
3. Semiconductor current-flow equations (diffusion and degeneracy)
4. GaAs, AlAs, and AlxGa1−xAs Material parameters for use in research and device applications
5. T) falloff at high current densities
6. Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors