Bandgap Narrowing and Emitter Efficiency in Heavily Doped Emitter Structures Revisited

IEEE Transactions on Electron Devices

Volumn 40, Issue 6, 1993, Pages 1140-1147

  Van Vliet, Carolyne M ^a  

^a FLORIDA INTERNATIONAL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS;

BANDGAP NARROWING; DENSITY OF STATES; EMITTER EFFICIENCY; HEAVILY-DOPED EMITTER STRUCTURES; MINORITY-CARRIER EMITTER CURRENT; SURFACE/BULK RECOMBINATION;

SEMICONDUCTOR MATERIALS;

EID: 0027607342     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.214741     Document Type: Article

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