메뉴 건너뛰기




Volumn 31, Issue 12, 1984, Pages 1758-1765

An Investigation of the Effect of Graded Layers and Tunneling on the Performance of AlGaAs/GaAs Heterojunction Bipolar Transistors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001242402     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21784     Document Type: Article
Times cited : (147)

References (15)
  • 1
    • 84941507730 scopus 로고
    • U.S. Patent 2 569 347.
    • W. Shockley, U.S. Patent 2 569 347, 1951.
    • (1951)
    • Shockley, W.1
  • 2
    • 84938006654 scopus 로고
    • Theory of a wide-gap emitter for transistors
    • Nov.
    • H. Kroemer “Theory of a wide-gap emitter for transistors,” Proc. IRE, vol. 45, pp. 1535–1537, Nov. 1957.
    • (1957) Proc. IRE , vol.45 , pp. 1535-1537
    • Kroemer, H.1
  • 3
    • 0019918412 scopus 로고
    • Heterostructure bipolar transistors and integrated circuits
    • Jan.
    • — “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, pp. 13–25, Jan. 1982.
    • (1982) Proc. IEEE , vol.70 , pp. 13-25
    • Kroemer, H.1
  • 4
    • 0020115535 scopus 로고
    • Heterostructure bipolar transistors: What should we build?
    • Apr.-June.
    • —, “Heterostructure bipolar transistors: What should we build?” J. Vac. Sci. Technol., vol. B1, no. 2, pp. 126–130, Apr.-June 1983.
    • (1983) J. Vac. Sci. Technol. , vol.B1 , Issue.2 , pp. 126-130
    • Kroemer, H.1
  • 5
    • 0043121695 scopus 로고
    • Diffused epitaxial GaAlAs–GaAs heterojunction bipolar transistor for high frequency operation
    • D. Ankri, A. Scavennec, C. Besombes, C. Courbet, F. Heliot, and J. Riou, “Diffused epitaxial GaAlAs–GaAs heterojunction bipolar transistor for high frequency operation,” Appl. Phys. Lett., vol. 40, p. 816, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 816
    • Ankri, D.1    Scavennec, A.2    Besombes, C.3    Courbet, C.4    Heliot, F.5    Riou, J.6
  • 6
    • 0017542764 scopus 로고
    • (GaAl)As/GaAs heterojunction phototransistors with high current gain
    • Oct.
    • M. Konagai, K. Katsukawa, and K. Takahashi “(GaAl)As/GaAs heterojunction phototransistors with high current gain,” J. Appl. Phys., vol. 48, pp. 4389–4394, Oct. 1977.
    • (1977) J. Appl. Phys. , vol.48 , pp. 4389-4394
    • Konagai, M.1    Katsukawa, K.2    Takahashi, K.3
  • 7
    • 0020848409 scopus 로고
    • Double heterojunction GaAs/AlxGa1− x As bipolar transistors prepared by molecular beam epitaxy
    • S. L. Su, R. Fischer, W. G. Lyons, O. Tejayedi, D. Arnold, J. Klem, and H. Morkoç “Double heterojunction GaAs/AlxGa1− x As bipolar transistors prepared by molecular beam epitaxy,” J. Appl. Phys., vol. 54, pp. 6725–6731, 1983.
    • (1983) J. Appl. Phys. , vol.54 , pp. 6725-6731
    • Su, S.L.1    Fischer, R.2    Lyons, W.G.3    Tejayedi, O.4    Arnold, D.5    Klem, J.6    Morkoç, H.7
  • 9
  • 11
    • 0040990218 scopus 로고
    • Experiments on Ge-GaAs heterojunctions
    • R. L. Anderson “Experiments on Ge-GaAs heterojunctions,” Solid-State Electron., vol. 5, pp. 341–351, 1962.
    • (1962) Solid-State Electron. , vol.5 , pp. 341-351
    • Anderson, R.L.1
  • 13
    • 0020167868 scopus 로고
    • GaAlAs-GaAs ballistic heterojunction bipolar transistor
    • D. Ankri and L. F. Eastman, “GaAlAs-GaAs ballistic heterojunction bipolar transistor,” Electron Lett., vol. 18, p. 750, 1982.
    • (1982) Electron Lett. , vol.18 , pp. 750
    • Ankri, D.1    Eastman, L.F.2
  • 14
    • 0002917356 scopus 로고
    • Theory of field emission from semiconductors
    • R. Stratton “Theory of field emission from semiconductors,” Phys. Rev., vol. 125, pp. 67–82, 1969.
    • (1969) Phys. Rev. , vol.125 , pp. 67-82
    • Stratton, R.1
  • 15
    • 0001062092 scopus 로고
    • Field and thermionic-field emission in Schottky barriers
    • F. A. Padovani and R. Stratton “Field and thermionic-field emission in Schottky barriers,” Solid-State Electron., vol. 9, pp. 695–707, 1966.
    • (1966) Solid-State Electron. , vol.9 , pp. 695-707
    • Padovani, F.A.1    Stratton, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.