Substrate-related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMT

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 25-33

  Haruyama, Junzi ^a   Negishi, Hitoshi ^a   Nishimura, Yoshikazu ^a   Nashimoto, Yasunobu ^b  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); PHOTOSENSITIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; VOLTAGE MEASUREMENT;

KINK EFFECTS; SIDEGATE ELECTRODES; SUBSTRATE POTENTIAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030779416     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554787     Document Type: Article

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