Light-Induced Sidegating Effect in GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 40, Issue 12, 1993, Pages 2186-2191

  Chang, Shwu Jing ^a   Lee, Chien Ping ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); INTERFACES (MATERIALS); ION IMPLANTATION; IONIC CONDUCTION; IONIZATION OF SOLIDS; LIGHT; MATHEMATICAL MODELS; PHOTOSENSITIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

CHANNEL-SUBSTRATE INTERFACE; ELECTRON TRAP RICH SUBSTRATE; HOLE TRAPS; LIGHT INDUCED SIDEGATING EFFECT; PHOTOGENERATED HOLES; SIDEGATE VOLTAGES;

MESFET DEVICES;

EID: 0027850145     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249463     Document Type: Article

References (15)

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