The influence of substrate compensation on inter-electrode leakage and back-gating in GaAs MESFETs

Solid State Electronics

Volumn 34, Issue 3, 1991, Pages 233-252

  George, Peter ^a   Ko, Ping K ^b   Hu, Chenming ^b  

^a HEWLETT PACKARD COMPANY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION - APPLICATIONS; ELECTRODES - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

BACK-GATING; HOLE INJECTION; INTER-ELECTRODE LEAKAGE; LEAKAGE CURRENT ONSET VOLTAGE; P-WELLS; SUBSTRATE COMPENSATION;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026116622     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90180-7     Document Type: Article

References (27)

1. Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layer
2. The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits
3. Backgating in GaAs MESFET's
4. Geometrical and light-induced effects on back-gating in ion-implanted GaAs MESFET's
5. Modeling of backgating effects on GaAs digital integrated circuits
6. Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrate
7. IEEE GaAs IC Symp. Technical Digest