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Applied Physics Letters
Volumn 61, Issue 8, 1992, Pages 928-930
Elimination of the kink effect in GaAs metal semiconductor field-effect transistors by utilizing a low-temperature-grown buffer layer
(3)
Haruyama, Junzi
a
Goto, Norio
a
Negishi, Hitoshi
a
a
NEC CORPORATION
(
Japan
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
3743122025
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.107731
Document Type
:
Article
Times cited : (
9
)
References (
11
)
1
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(unpublished)
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1
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4
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5
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5
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5
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(1990)
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1
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3
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(1991)
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, vol.12
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1
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2
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(1990)
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1
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4
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5
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(1991)
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, vol.59
, pp. 1491
Knox, W.H.
1
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2
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3
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4
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5
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6
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0013035317
(1991)
Phys. Rev. Lett.
, vol.66
, pp. 3079
Baranowski, J.M.
1
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4
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
