Kink Effect Related to the Self-Side-Gating Effect in GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1873-1875

  Katano, Humiaki ^a   Nashimoto, Yasunobu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC INSULATORS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); HETEROJUNCTIONS; INTERFACES (MATERIALS); IONIZATION; MEASUREMENTS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

BUFFER LAYER; CHANNEL CURRENT PATH; DRAIN CURRENT; HIGH DRAIN VOLTAGES; HOLE ACCUMULATION; IMPACT IONIZATION; KINK EFFECT; SELF SIDE GATING EFFECT; SUBSTRATE POTENTIAL;

MESFET DEVICES;

EID: 0028517082     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324603     Document Type: Article

References (15)

1. S. Tehrani, H. Goronkin, M. M. Hoogsra, G. N. Maracas, J. A. Curless, G. D. Kramer, M. S. Peffley, and R. K. Tsui, “Excess drain current in heterojunction FET’s due to substrate space charge limited current,” IEEE Trans. Electron Devices, vol. 36, pp. 1591–1595, Sept. 1989.
2. A. S. Brown, U. K. Mishra, and S. E. Rosenbaum, “The effect of interface and alloy quality on the DC and RF performance of GalnAs-AHnAs HEMT’s,” IEEE Trans. Electron Devices, vol. 36, pp. 641–645, Apr. 1989.
3. J. B. Kuang, P. J. Tasker, G. W. Wang, Y. K. Chen, L. F. Eastman, O. A. Aina, H. Hier, and A. Fathimulla, “Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFET’s,” IEEE Electron Device Lett., vol. 9, pp. 630–632, Dec. 1988.
4. A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina, and H. Hier, “DC and RF characterization of short gate length InGaAs/InAlAs MODFET’s,” IEEE Trans. Electron Devices, vol. 36, pp. 2361–2364, Oct. 1989.
5. K. Kato, T. Wada, and K. Taniguchi, “Analysis of kink characteristics in silicon on insulator MOSFET’s using two carrier modeling,” IEEE Trans. Electron Devices, vol. 32, pp. 458–461, Feb. 1985.
6. K. Kunihiro, H. Yano, N. Goto, and Y. Ohno, “Numerical analysis of kink effect in HJFET with a heterobuffer layer,” IEEE Trans. Electron Devices, vol. 40, pp. 493–497, Mar. 1993.
7. J. Haruyama, N. Goto, and Y. Nashimoto, “Photoemissions related to the kink effect in GaAs metal semiconductor field-effect-transistors with an Al0.2Ga0.8As/GaAs buffer layer,” Appl. Phys. Lett., vol. 63, pp. 648–650, May 1993.
8. J. Haruyama, N. Goto, and H. Negishi, “Elimination of the kink effect in GaAs metal semiconductor field-effect-transistors by utilizing a low-temperature-grown buffer layer,” Appl. Phys. Lett., vol. 61, pp. 928–930, Aug. 1992.
9. N. Goto, Y. Ohno, and H. Yano, “Two dimensional numerical simulation of side-gating effect in GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. 37, pp. 1821–1827, Aug. 1990.
10. P. Geroge, P. K. Ko, and C. Hu, “The influence of substrate compensation on interelectrode leakage and back-gating in GaAs MESFETs,” Solid-State Electronics, vol. 34, no. 3, pp. 233–252, 1991.
11. P. Geroge, K. Hui, P. K. Ko, and C. Hu, “The reduction of back-gating in GaAs MESFET’s by impact ionization,” IEEE Electron Device Lett., vol. 11, pp. 435–436, Oct. 1990.
12. D. D. Shulman and L. Young, “Sidegating in GaAs metal-semiconductor field-effect transistors under low-level injection,” J. Appl. Phys., vol. 70, no. 11, pp. 7149–7155, 1991.
13. T. Hirohata, T. Suzuki, K. Nakajima, and Y. Mizushima, “Low-field breakdown and negative differential resistance in semi-insulating GaAs,” Japan. J. Appl. Phys., vol. 32, part 1, no. 9A, pp. 3700–3706, 1993.
14. K. Hui, C. Hu, P. Geroge, and P. K. Ko, “Impact ionization in GaAs MESFET’s,” IEEE Electron Device Lett., vol. 11, pp. 113–115, Oct. 1990.
15. Y.-Z. Chen and T.-W. Tang, “Impact ionization coefficient and energy distribution function at high fields in semiconductors,” J. Appl. Phys., vol. 65, no. 11, pp. 4279–4286, 1989.