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Journal of Applied Physics
Volumn 77, Issue 8, 1995, Pages 3913-3918
Impact ionization in GaAs metal-semiconductor field-effect transistors with a lightly doped drain structure and an Al0.2Ga0.8As/GaAs heterobuffer layer
(2)
Haruyama, Junzi
a
Katano, Humiaki
a
a
NEC CORPORATION
(
Japan
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
3943080592
PISSN
:
00218979
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.358570
Document Type
:
Article
Times cited : (
4
)
References (
19
)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
