Two-Dimensional Numerical Simulation of Side-Gating Effect in GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 8, 1990, Pages 1821-1827

  Goto, Norio ^a   Ohno, Yasuo ^a   Yano, Hitoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; TRANSISTORS, FIELD EFFECT - GATES;

DONOR CONCENTRATION; DRAIN CURRENT REDUCTION; HOLE TRAPS; N-TYPE CHANNEL; SEMI-INSULATING SUBSTRATES; SIDE-GATING EFFECT; TOTAL ACCEPTOR CONCENTRATION;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025477975     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.57132     Document Type: Article

References (15)

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