Transient response measurement of kink effect in InAlAs/InGaAs/InP HEMTs

Electronics Letters

Volumn 30, Issue 4, 1994, Pages 368-369

  Kruppa, W ^a   Boos, J B ^a   Kruppa, N ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

Author keywords

High electron mobility transistors; Transient response

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; FABRICATION; MOLECULAR BEAM EPITAXY; PERFORMANCE; PHOTOLITHOGRAPHY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TIME DOMAIN ANALYSIS;

ELECTRON TRAPPING; KINK EFFECT; TRANSCONDUCTANCE; TRANSIENT RESPONSE; VOLTAGE PULSES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028381235     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940037     Document Type: Article

References (4)

1. 1-xAs HEMTs’, IEEE Trans., 1991, ED-38, (4), pp. 862–870
2. KRUPPA, W., and BOOS, J.B.: ‘Sinusoidal and transient response of traps in double-recessed InAlAs/InGaAs/InP HEMTs’. Proc. 5th Int. Conf. IPRM, 1993, pp. 251–254
3. DUMAS, J.M., AUDREN, P., PAUGAM, J., FAVENNEC, M.P., VUCHENER, C., and LECROSNIER, D.: ‘A study of parasitic effects in MBE-grown InAlAs/InGaAs/InAlAs HEMTs’. Proc. 5thInt. Conf. IPRM, 1993, pp. 420–423
4. BOOS, J.B., and KRUPPA, W.; ‘InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process’. Electron. Lett., 1991, 27, (21), pp. 1909–1910