Gate pulse frequency-dependent kink effects in GaAs metal-semiconductor field-effect-transistors with a low-temperature-grown buffer layer

Journal of Applied Physics

Volumn 78, Issue 11, 1995, Pages 6839-6845

  Haruyama, Junzi ^a   Negishi, Hitoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449000877     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360445     Document Type: Article

References (0)