Mesa-Sidewall Gate Leakage in InAlAs/InGaAs Heterostructure Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 39, Issue 9, 1992, Pages 2037-2043

  Leary, Michael H ^a   Del Alamo, Jesus A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM COMPOUNDS;

MESA ISOLATION; MOLE FRACTION;

FIELD EFFECT TRANSISTORS;

EID: 0026927886     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.155875     Document Type: Article

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