High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 12 PART 2, 1996, Pages 2361-2368

  Umeda, Yohtaro ^a   Enoki, Takatomo ^a   Osafune, Kazuo ^a   Ito, Hiroshi ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FREQUENCY DIVIDING CIRCUITS; FREQUENCY STABILITY; GAIN MEASUREMENT; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SIGNAL TO NOISE RATIO;

ETCH STOPPER; LOW NOISE AMPLIFIERS; TOGGLE FREQUENCY;

MICROWAVE AMPLIFIERS;

EID: 0030386946     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.554560     Document Type: Article

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