Ultra-Low-Noise 1.2- to 1.7-GHz Cooled GaAsFET Amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 30, Issue 6, 1982, Pages 849-853

  Weinreb, Sander ^a   Harris, Ronald W ^a   Fenstermacher, Dan L ^a  

^a NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; TRANSISTORS, FIELD EFFECT - APPLICATIONS;

GALLIUM ARSENIDE AMPLIFIERS; SOURCE INDUCTANCE FEEDBACK;

AMPLIFIERS, MICROWAVE;

EID: 0020141111     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1982.1131159     Document Type: Article

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