Extremely low-noise InP-based HEMT with silicon nitride passivation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 907-910

  Kao, Ming Yih ^a   Duh, K H George ^a   Ho, Pin ^a   Chao, Pane Chane ^a  

^a Martin Marietta Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; SPURIOUS SIGNAL NOISE;

LOW NOISE INDIUM PHOSPHIDE BASED HEMT; RADIOFREQUENCY PERFORMANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028735854     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)