High-efficiency InP-based HEMT MMIC power amplifier

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 375-377

  Kurdoghlian, A ^a   Lam, W ^a   Chou, C ^a   Jellian, L ^a   Igawa, A ^a   Matloubian, M ^a   Larson, L ^a   Brown, A ^a   Thompson, M ^a   Ngo, C ^a  

^a Hughes Microelectronics Div ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; PERFORMANCE; PRODUCT DESIGN; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

HIGH EFFICIENCY; MICROWAVE MONOLITHIC INTEGRATED CIRCUITS; POWER ADDED EFFICIENCY; Q-BANDS; STATE OF THE ART POWER PERFORMANCE;

POWER AMPLIFIERS;

EID: 0027866096     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)